ທາດຍ່ອຍ
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Silicon Carbide SiC Ingot 6inch N type Dummy/prime grade thickness ສາມາດປັບແຕ່ງໄດ້.
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SiC Ingot 4H-N ປະເພດ Dummy grade 2inch 3inch 4inch 6inch thickness:＞10mm
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HPSI SiC wafer dia: 3inch ຄວາມຫນາ: 350um ± 25 µm ສໍາລັບພະລັງງານເອເລັກໂຕຣນິກ
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3inch ຄວາມບໍລິສຸດສູງ Semi-Insulating (HPSI) SiC wafer 350um Dummy grade Prime grade
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Sic Substrate Silicon Carbide Wafer 4H-N ປະເພດ Hardness ສູງ Corrosion Resistance Prime Grade Polishing
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade
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2inch Silicon Carbide Wafer 6H-N Type Prime Grade Research Grade Dummy Grade 330μm ຄວາມຫນາ 430μm
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2inch silicon carbide substrate 6H-N double-sided polished ເສັ້ນຜ່າສູນກາງ 50.8mm ການຜະລິດຊັ້ນຮຽນທີຄົ້ນຄ້ວາ
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p-type 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5° Zero MPD
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SiC substrate P-type 4H/6H-P 3C-N 4inch withe thickness of 350um ເກຣດ Dummy ຊັ້ນຜະລິດ
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4H/6H-P 6inch SiC wafer Zero MPD ເກຣດການຜະລິດເກຣດ Dummy Grade
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P-type SiC wafer 4H/6H-P 3C-N ຄວາມໜາ 6 ນິ້ວ 350 μm ດ້ວຍການວາງທິດທາງຮາບພຽງຕົ້ນຕໍ