SiC
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Silicon Carbide SiC Ingot 6inch N type Dummy/prime grade thickness ສາມາດປັບແຕ່ງໄດ້.
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SiC Ingot 4H-N ປະເພດ Dummy grade 2inch 3inch 4inch 6inch thickness:＞10mm
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HPSI SiC wafer dia: 3inch ຄວາມຫນາ: 350um ± 25 µm ສໍາລັບພະລັງງານເອເລັກໂຕຣນິກ
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3inch ຄວາມບໍລິສຸດສູງ Semi-Insulating (HPSI) SiC wafer 350um Dummy grade Prime grade
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Sic Substrate Silicon Carbide Wafer 4H-N ປະເພດ Hardness ສູງ Corrosion Resistance Prime Grade Polishing
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade
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2inch Silicon Carbide Wafer 6H-N Type Prime Grade Research Grade Dummy Grade 330μm ຄວາມຫນາ 430μm
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2inch silicon carbide substrate 6H-N double-sided polished ເສັ້ນຜ່າສູນກາງ 50.8mm ການຜະລິດຊັ້ນຮຽນທີຄົ້ນຄ້ວາ
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N-Type SiC Composite Substrates Dia6inch ຄຸນະພາບສູງ monocrystaline ແລະ substrate ທີ່ມີຄຸນນະພາບຕ່ໍາ
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Semi-Insulating SiC Composite Substrates Dia2inch 4inch 6inch 8inch HPSI
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P-type SiC substrate SiC wafer Dia2inch ຜະລິດຕະພັນໃຫມ່
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N-Type SiC ເທິງ Si Composite Substrates Dia6inch