ທາດຍ່ອຍ
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ຂະບວນການ TVG ກ່ຽວກັບ quartz sapphire BF33 wafer ແກ້ວ wafer punching
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Single Crystal Silicon Wafer Si Substrate N/P ທາງເລືອກ Silicon Carbide Wafer
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N-Type SiC Composite Substrates Dia6inch ຄຸນະພາບສູງ monocrystaline ແລະ substrate ທີ່ມີຄຸນນະພາບຕ່ໍາ
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Semi-Insulating SiC ເທິງຊັ້ນຍ່ອຍ Si Composite
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Semi-Insulating SiC Composite Substrates Dia2inch 4inch 6inch 8inch HPSI
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Synthetic Sapphire boule Monocrystal Sapphire Blank ເສັ້ນຜ່າສູນກາງແລະຄວາມຫນາສາມາດປັບແຕ່ງໄດ້
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N-Type SiC ເທິງ Si Composite Substrates Dia6inch
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SiC substrate Dia200mm 4H-N ແລະ HPSI Silicon carbide
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3inch SiC substrate Production Dia76.2mm 4H-N
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SiC substrate P ແລະ D grade Dia50mm 4H-N 2inch
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TGV Glass substrates 12inch wafer ແກ້ວ punching
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SiC Ingot 4H-N ປະເພດ Dummy grade 2inch 3inch 4inch 6inch thickness:＞10mm