SiC
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6 ໃນ Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
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SiC Ingot 4H type Dia 4inch 6inch Thickness 5-10mm Research / Dummy Grade
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ຄວາມບໍລິສຸດສູງ 3 ນິ້ວ (Undoped) Silicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)
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Sic Substrate Silicon Carbide Wafer 4H-N ປະເພດ Hardness ສູງ Corrosion Resistance Prime Grade Polishing
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2inch Silicon Carbide Wafer 6H-N Type Prime Grade Research Grade Dummy Grade 330μm ຄວາມຫນາ 430μm
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2inch silicon carbide substrate 6H-N double-sided polished ເສັ້ນຜ່າສູນກາງ 50.8mm ການຜະລິດຊັ້ນຮຽນທີຄົ້ນຄ້ວາ
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N-Type SiC Composite Substrates Dia6inch ຄຸນະພາບສູງ monocrystaline ແລະ substrate ທີ່ມີຄຸນນະພາບຕ່ໍາ
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Semi-Insulating SiC Composite Substrates Dia2inch 4inch 6inch 8inch HPSI
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N-Type SiC ເທິງ Si Composite Substrates Dia6inch
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SiC substrate Dia200mm 4H-N ແລະ HPSI Silicon carbide
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3inch SiC substrate Production Dia76.2mm 4H-N
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SiC substrate P ແລະ D grade Dia50mm 4H-N 2inch