ຜະລິດຕະພັນ
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ຊັ້ນໃຕ້ດິນທອງແດງ Cu wafer 5x5x0.5/1mm 10x10x0.5/1mm 20x20x0.5/1mm
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Nickel wafer Ni Substrate 5x5x0.5/1mm 10x10x0.5/1mm 20x20x0.5/1mm
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Ni Substrate/wafer single crystal cubic structure a=3.25A ຄວາມໜາແໜ້ນ 8.91
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Magnesium single crystal Substrate Mg wafer ຄວາມບໍລິສຸດ 99.99% 5x5x0.5/1mm 10x10x0.5/1mm20x20x0.5/1mm
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Magnesium Single crystal Mg wafer DSP SSP Orientation
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ໂລຫະອາລູມິນຽມ substrate ໄປເຊຍກັນດຽວ polished ແລະປະມວນຜົນໃນຂະຫນາດສໍາລັບການຜະລິດວົງຈອນປະສົມປະສານ
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ແຜ່ນຮອງອາລູມິນຽມ ທິດດ່ຽວ ຊັ້ນລຸ່ມອາລູມີນຽມ 111 100 111 5×5×0.5mm
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Quartz Glass Wafer JGS1 JGS2 BF33 Wafer 8inch 12inch 725 ± 25 um ຫຼື Customized
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ທໍ່ sapphire CZmethod KY method ອຸນຫະພູມສູງ Resistance Al2O3 99.999% single crystal sapphire
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p-type 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5° Zero MPD
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SiC substrate P-type 4H/6H-P 3C-N 4inch withe thickness of 350um ເກຣດ Dummy ຊັ້ນຜະລິດ
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4H/6H-P 6inch SiC wafer Zero MPD ເກຣດການຜະລິດເກຣດ Dummy Grade